?2001 fairchild semiconductor corporation june 2001 FMC6G30US60 rev. a3 igbt FMC6G30US60 FMC6G30US60 compact & complex module general description fairchild?s insulated gate bipolar transistor (igbt) power modules provide low conduction and switching losses as well as short circuit ruggedness. they are designed for applications such as motor control, uninterrupted power supplies (ups) and general inverters where short circuit ruggedness is a required feature. features ? ul certified no. e209204 ? short circuit rated 10us @ t c = 100 c, v ge = 15v ? high speed switching ? low saturation voltage : v ce (sat) = 2.2 v @ i c = 30a ? high input impedance ? built in 3 phase rectifier circuit ? fast & soft anti-parallel fwd applications ? ac & dc motor controls ? general purpose inverters ? robotics ? servo controls internal circuit diagram r s t pp1 gu eu gu gv ev gv u gw ew v gw w e nb package code : 21pm-ba absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature symbol description fmc7g30us60 units inverter v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c30 a i cm (1) pulsed collector current 60 a i f diode continuous forward current @ t c = 100 c30 a i fm diode maximum forward current 60 a p d maximum power dissipation @ t c = 25 c 125 w t sc short circuit withstand time @ t c = 100 c10 us converter v rrm repetitive peak reverse voltage 1200 v i o average output rectified current 30 a i fsm surge forward current @ 1cycle at 60hz, peak value non-repetitive 300 a i 2 t 1 cycle surge current 369 a 2 s common t j operating junction temperature -40 to +150 c t stg storage temperature range -40 to +125 c v iso isolation voltage @ ac 1minute 2500 v mounting torque mounting part screw @ m4 1.25 n.m
?2001 fairchild semiconductor corporation FMC6G30US60 rev. a3 FMC6G30US60 electrical characteristics of the igbt @ inverter t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coeff. of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 30ma, v ce = v ge 5.0 6.0 8.5 v v ce(sat) collector to emitter saturation voltage i c = 30a , v ge = 15v -- 2.2 2.8 v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 1970 -- pf c oes output capacitance -- 310 -- pf c res reverse transfer capacitance -- 74 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 30a, r g = 7 ? , v ge = 15v, inductive load, t c = 25 c -- 30 -- ns t r rise time -- 65 -- ns t d(off) turn-off delay time -- 54 80 ns t f fall time -- 138 200 ns e on turn-on switching loss -- 0.92 -- mj e off turn-off switching loss -- 0.82 -- mj e ts total switching loss -- 1.74 2.4 mj t d(on) turn-on delay time v cc = 300 v, i c = 30a, r g = 7 ? , v ge = 15v, inductive load, t c = 125 c -- 34 -- ns t r rise time -- 67 -- ns t d(off) turn-off delay time -- 60 90 ns t f fall time -- 281 400 ns e on turn-on switching loss -- 0.93 -- mj e off turn-off switching loss -- 1.56 -- mj e ts total switching loss -- 2.49 3.4 mj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 c 10 -- -- us q g total gate charge v ce = 300 v, i c = 30a, v ge = 15v -- 85 120 nc q ge gate-emitter charge -- 17 25 nc q gc gate-collector charge -- 39 55 nc
?2001 fairchild semiconductor corporation FMC6G30US60 rev. a3 FMC6G30US60 electrical characteristics of the diode @ inverter t c = 25 c unless otherwise noted electrical characteristics of the diode @ converter t c = 25 c unless otherwise noted thermal characteristics symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 30a t c = 25 c -- 2.0 2.8 v t c = 100 c -- 2.0 -- t rr diode reverse recovery time i f = 30a di / dt = 60 a/us t c = 25 c -- 90 180 ns t c = 100 c -- 130 -- i rr diode peak reverse recovery current t c = 25 c -- 2.2 3.4 a t c = 100 c -- 3.4 -- q rr diode reverse recovery charge t c = 25 c -- 400 600 nc t c = 100 c -- 880 -- symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 30a t c = 25 c -- 1.1 1.5 v t c = 100 c -- 1.0 -- i rrm repetitive reverse current v r = v rrm t c = 25 c -- -- 8 ma t c = 100 c -- 5 -- symbol parameter typ. max. units inverter r jc junction-to-case (igbt part, per 1/6 module) -- 1.0 c / w r jc junction-to-case (diode part, per 1/6 module) -- 2.2 c / w converter r jc junction-to-case (diode part, per 1/6 module) -- 2.0 c / w weight weight of module 270 -- g
?2001 fairchild semiconductor corporation FMC6G30US60 rev. a3 FMC6G30US60 fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 02468 0 10 20 30 40 50 60 70 80 90 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] 110 0 10 20 30 40 50 60 70 80 90 common emitter v ge = 15v t c = 25 t c = 125 ------ collector current, i c [a] collector - emitter voltage, v ce [v] -50 0 50 100 150 0 1 2 3 4 5 30a 60a 45a i c = 15a common emitter v ge = 15v collector - emitter voltage, v ce [v] case temperature, t c [ ] 4 8 12 16 20 0 4 8 12 16 20 common emitter t c = 25 60a 30a i c = 15a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 common emitter t c = 125 60a 30a i c = 15a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0 5 10 15 20 25 30 35 40 0.1 1 10 100 1000 duty cycle : 50% t c = 100 power dissipation = 45w v cc = 300v load current : peak of square wave frequency [khz] load current [a]
?2001 fairchild semiconductor corporation FMC6G30US60 rev. a3 FMC6G30US60 fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 15 30 45 60 100 1000 tf toff toff tf common emitter v ge = 15v, r g = 7 ? t c = 25 t c = 125 ------ switching time [ns] collector current, i c [a] 110 0 500 1000 1500 2000 2500 3000 3500 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v] 110100 10 100 1000 common emitter v cc = 300v, v ge = 15v i c = 30a t c = 25 t c = 125 ------ ton tr switching time [ns] gate resistance, r g [ ? ] 110100 100 1000 toff tf toff tf common emitter v cc = 300v, v ge = 15v i c = 30a t c = 25 t c = 125 ------ switching time [ns] gate resistance, r g [ ? ] 110100 100 1000 10000 eoff eon eoff common emitter v cc = 300v, v ge = 15v i c = 30a t c = 25 t c = 125 ------ switching loss [uj] gate resistance, r g [ ? ] 15 30 45 60 10 100 1000 ton tr common emitter v ge = 15v, r g = 7 ? t c = 25 t c = 125 ------ switching time [ns] collector current, i c [a]
?2001 fairchild semiconductor corporation FMC6G30US60 rev. a3 FMC6G30US60 fig 14. gate charge characteristics fig 13. switching loss vs. collector current fig 15. soa characteristics fig 16. turn-off soa characteristics fig 17. rbsoa characteristics fig 18. transient thermal impedance 0 100 200 300 400 500 600 700 0.1 1 10 100 single nonrepetitive pulse t j 125 v ge = 15v r g = 7 ? collector current, i c [a] collector-emitter voltage, v ce [v] 15 30 45 60 100 1000 10000 eoff eon eoff common emitter v ge = 15v, r g = 7 ? t c = 25 t c = 125 ------ switching loss [uj] collector current, i c [a] 0 20406080100 0 3 6 9 12 15 200 v 300 v v cc = 100 v common emitter r l = 10 ? t c = 25 gate - emitter voltage, v ge [ v ] gate charge, q g [ nc ] 1 10 100 1000 1 10 100 safe operating area v ge = 20v, t c = 100 collector current, i c [a] collector-emitter voltage, v ce [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.005 0.01 0.1 1 5 igbt : diode : thermal response, zthjc [ /w] rectangular pulse duration [sec] 0.3 1 10 100 1000 0.1 1 10 100 200 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50us 100us 1 ? dc operation i c max. (continuous) i c max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v]
?2001 fairchild semiconductor corporation FMC6G30US60 rev. a3 FMC6G30US60 5 1015202530 0.5 1 10 20 common cathode di/dt = 60a/us t c = 25 t c = 100 i rr t rr peak reverse recovery current, i rr [a] reverse recovery time, t rr [x10ns] forward current, i f [a] fig 20. reverse recovery characteristics fig 19. forward characteristics 01234 0 10 20 30 40 50 60 70 80 90 common cathode v ge = 0v t c = 25 t c = 125 forward current, i f [a] forward voltage, v f [v]
?2001 fairchild semiconductor corporation FMC6G30US60 rev. a3 FMC6G30US60 package dimension 21pm-ba (fs pkg code bk) dimensions in millimeters
?2001 fairchild semiconductor corporation trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. h3 a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
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